Simulation of threshold operation of GaInNAs diode lasers

Robert P. Sarzala; Pawel Mackowiak; M. Wasiak; T. Czyszanowski; Wlodzimierz Nakwaski

doi:10.1117/12.519754

22 October 2003 Simulation of threshold operation of GaInNAs diode lasers

Robert P. Sarzala, Pawel Mackowiak, M. Wasiak, T. Czyszanowski, Wlodzimierz Nakwaski

Author Affiliations +

Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519754
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The advanced three-dimensional fully self-consistent optical-electrical-thermal-gain model of the 1.3-μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser (VCSEL) has been developed to simulate its room-temperature (RT) continuous-wave (CW) performance characteristics and to enable its structure optimisation. The standard GaInNAs VCSEL structure with an intracavity-contacted configuration exhibits very nonuniform current injection into its active region, whereas a uniform current injection is important in long-wavelength VCSELs for low threshold, high-efficiency and stable-mode operation. Therefore we decided to insert an additional tunnel junction within the active-region neighbourhood. The tunnel junction is shown to enhance effectively hole injection via a lateral electron current, with only a modest increase (a small penalty) in voltage drop and series resistance compared to standard devices.

Citation Download Citation

Robert P. Sarzala, Pawel Mackowiak, M. Wasiak, T. Czyszanowski, and Wlodzimierz Nakwaski "Simulation of threshold operation of GaInNAs diode lasers", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519754

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