22 October 2003 Studies of piezoresistance in Ge-Si whiskers at cryogenic temperatures
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The present paper deals with studies of deformation influence on GexSi1-x (x = 0.01 ÷ 0.03) whiskers conduction in the temperature range 4.2 ÷ 300 K. The whiskers were grown by chemical vapor deposition method in a sealed bromide system with use of Au and B dopants. The whiskers with resistivity ρ = 0.005 ÷ 0.025 Ω•cm were investigated. The values of resistivity corresponded to the impurity concentrations in the vicinity of the metal-insulator transition. The strain was imposed by the whisker mounting on specially selected substrates (quartz, copper, aluminum) with thermal expansion coefficient different from that in Si-Ge material. The 'giant' piezoresistance was found in the specimens at cryogenic temperatures. Estimated longitudinal gauge factor G <111> = Δρ/(ρoε) is equal to 10.000 ÷ 30.000 at 4.2 K in the whiskers with resistivity ρ = 0.012 ÷ 0.018 Ω•cm. From σ = f(1/T) curves activation energies for the hopping conductance in the whiskers have been calculated. Possible reasons of the obtained phenomena are discussed.
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Anatolij A. Druzhinin, Anatolij A. Druzhinin, I. P. Ostrovskii, I. P. Ostrovskii, Elena Lavitska, Elena Lavitska, Natalya Liakh, Natalya Liakh, Tomasz Palewski, Tomasz Palewski, "Studies of piezoresistance in Ge-Si whiskers at cryogenic temperatures", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.519666; https://doi.org/10.1117/12.519666

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