6 October 2003 A 0.5-W 850-nm AlxGa1-xAs VECSEL with intracavity silicon carbide heatspreader
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Proceedings Volume 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems; (2003) https://doi.org/10.1117/12.517987
Event: International Conference on Lasers, Applications, and Technologies 2002, 2002, Moscow, Russian Federation
Abstract
High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.
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Jennifer E. Hastie, Chan Wook Jeon, David Burns, John-Mark Hopkins, Stephane Calvez, Richard Abram, Martin D. Dawson, "A 0.5-W 850-nm AlxGa1-xAs VECSEL with intracavity silicon carbide heatspreader", Proc. SPIE 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, (6 October 2003); doi: 10.1117/12.517987; https://doi.org/10.1117/12.517987
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