6 October 2003 A 0.5-W 850-nm AlxGa1-xAs VECSEL with intracavity silicon carbide heatspreader
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Proceedings Volume 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems; (2003) https://doi.org/10.1117/12.517987
Event: International Conference on Lasers, Applications, and Technologies 2002, 2002, Moscow, Russian Federation
Abstract
High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jennifer E. Hastie, Jennifer E. Hastie, Chan Wook Jeon, Chan Wook Jeon, David Burns, David Burns, John-Mark Hopkins, John-Mark Hopkins, Stephane Calvez, Stephane Calvez, Richard Abram, Richard Abram, Martin D. Dawson, Martin D. Dawson, } "A 0.5-W 850-nm AlxGa1-xAs VECSEL with intracavity silicon carbide heatspreader", Proc. SPIE 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, (6 October 2003); doi: 10.1117/12.517987; https://doi.org/10.1117/12.517987
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