14 November 2003 Femtosecond laser ablation of materials
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Proceedings Volume 5147, ALT'02 International Conference on Advanced Laser Technologies; (2003) https://doi.org/10.1117/12.537580
Event: ALT'02 International Conference on Advanced laser Technologies, 2002, Adelboden, Switzerland
Abstract
Polycrystalline SiGe is attracting more and more attention in micro and optoelectronics devices both at industrial and university level. Research on both devices and material growth techniques continues at a very rapid pace in the scientific world. Low cost production techniques, capable to produce such alloys with uniform and controlled grain size, becomes of particular attention. Excimer laser crystallization has proved to be a valuable how thermal budget technique for amorphous silicon crystallization. Its main advantages are the high process quality and reproducibility joint to the possibility of tailoring the grain sizes both in small selected regions and in large areas. This technique is here applied for producing poly-SiGe alloys from amorphous SiGe films deposited on glass.
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Sebastien Bruneau, Sebastien Bruneau, Joerg Hermann, Joerg Hermann, Marc L. Sentis, Marc L. Sentis, Gabriel Dumitru, Gabriel Dumitru, Valerio Romano, Valerio Romano, Heinz P. Weber, Heinz P. Weber, Alexandre F. Semerok, Alexandre F. Semerok, Wladimir Marine, Wladimir Marine, "Femtosecond laser ablation of materials", Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003); doi: 10.1117/12.537580; https://doi.org/10.1117/12.537580
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