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14 November 2003 Laser annealing of ion-implanted diamond
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Proceedings Volume 5147, ALT'02 International Conference on Advanced Laser Technologies; (2003) https://doi.org/10.1117/12.537498
Event: ALT'02 International Conference on Advanced laser Technologies, 2002, Adelboden, Switzerland
Abstract
Laser-induced structure transformations in diamond single crystals implanted with light ions (H+, D+, He+) are studied by monitoring changes in the material density and optical transmission in dependence on UV laser pulsed irradiation parameters and ion implantation conditions. Characteristic features of the processes of laser annealing, graphitization, low-rate etching and explosive ablation of ion-implanted diamond layers are discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergej M. Pimenov, Vitaliy V. Kononenko, Taras V. Kononenko, Vitali I. Konov, Pascal Fischer, Valerio Romano, Heinz P. Weber, A. V. Khomich, and R. A. Khmelnitskiy "Laser annealing of ion-implanted diamond", Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003); https://doi.org/10.1117/12.537498
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