14 November 2003 Laser-induced local modification of silicon microdevices: a new technique for tuning analog microelectronics
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Proceedings Volume 5147, ALT'02 International Conference on Advanced Laser Technologies; (2003) https://doi.org/10.1117/12.543669
Event: ALT'02 International Conference on Advanced laser Technologies, 2002, Adelboden, Switzerland
Abstract
Highly accurate resistances can be made by iteratively laser inducing local diffusion of dopants from the drain and source of a gateless field effect transistor into the channel, thereby forming an electrical link between two adjacent p-n junction diodes. Using transmission electron microscopy, we showed that the laser induced diffusible resistance can be performed without any structural modification to the microdevices. Current-voltage (I-V) characteristics of these new microdevices are shown to be linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. A process model involving an approximate calculation of the laser melted region in which the dopant diffusion occurs has been developed. Experimental results are well described by the proposed model.
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Michel Meunier, Mathieu Ducharme, Jean-Yves Degorce, Yougui Liao, Alain Lacourse, "Laser-induced local modification of silicon microdevices: a new technique for tuning analog microelectronics", Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003); doi: 10.1117/12.543669; https://doi.org/10.1117/12.543669
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