Micromachining of gallium nitride, sapphire, and silicon carbide with ultrashort pulses

Graeme Rice; D. Jones; K. S. Kim; John M. Girkin; D. Jarozynski; Martin D. Dawson

doi:10.1117/12.543662

14 November 2003 Micromachining of gallium nitride, sapphire, and silicon carbide with ultrashort pulses

Graeme Rice, D. Jones, K. S. Kim, John M. Girkin, D. Jarozynski, Martin D. Dawson

Proceedings Volume 5147, ALT'02 International Conference on Advanced Laser Technologies; (2003) https://doi.org/10.1117/12.543662
Event: ALT'02 International Conference on Advanced laser Technologies, 2002, Adelboden, Switzerland

Abstract

Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size ~10s of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are compared and contrasted.

Citation Download Citation

Graeme Rice, D. Jones, K. S. Kim, John M. Girkin, D. Jarozynski, and Martin D. Dawson "Micromachining of gallium nitride, sapphire, and silicon carbide with ultrashort pulses", Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003); https://doi.org/10.1117/12.543662

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