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14 November 2003 Micromachining of gallium nitride, sapphire, and silicon carbide with ultrashort pulses
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Proceedings Volume 5147, ALT'02 International Conference on Advanced Laser Technologies; (2003) https://doi.org/10.1117/12.543662
Event: ALT'02 International Conference on Advanced laser Technologies, 2002, Adelboden, Switzerland
Abstract
Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size ~10s of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are compared and contrasted.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Graeme Rice, D. Jones, K. S. Kim, John M. Girkin, D. Jarozynski, and Martin D. Dawson "Micromachining of gallium nitride, sapphire, and silicon carbide with ultrashort pulses", Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003); https://doi.org/10.1117/12.543662
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