Through-pellicle-capable DUV-based CD metrology on reticles for wafer fab and R&D environment

Rik M. Jonckheere; Vicky Philipsen; Gerd Scheuring; Frank Hillmann; Hans-Jurgen Brueck; Volodymyr Ordynskyy; Kai Peter; Andrew C. Hourd; Thomas Schaetz; Shiuh-Bin Chen; Parkson W. Chen; Karl Sommer

doi:10.1117/12.515116

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28 May 2003 Through-pellicle-capable DUV-based CD metrology on reticles for wafer fab and R&D environment

Rik M. Jonckheere, Vicky Philipsen, Gerd Scheuring, Frank Hillmann, Hans-Jurgen Brueck, Volodymyr Ordynskyy, Kai Peter, Andrew C. Hourd, Thomas Schaetz, Shiuh-Bin Chen, Parkson W. Chen, Karl Sommer

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Proceedings Volume 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2003) https://doi.org/10.1117/12.515116
Event: 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2003, Sonthofen, Germany

Abstract

A comparison has been made in terms of mask CD linearity measurements between the 2 tool versions of a 248nm based optical CD metrology tool for photomasks, i.e., the high-NA M5k-SWD and the through-pellicle M5k-LWD, as well as to a reticle SEM, i.e., the KLA-T 8250-XR. The measured pattern consists of lines and dots (dark features), and spaces arid contact holes (clear features), both in equal-lines-and-spaces and as isolated feature. Two masks have been measured with the same test pattern, i.e., a binary and a 9%-attPSM for 193nm lithography. The latter was especially challenging because typically such embedded phase shift masks are much more transparent at higher wavelengths than those for which they are optimized. All measurements on the M5k were made intentionally before calibration (apart fmm pitch calibration). The resolution performance of the M5k-LWD and the measurement offsets found between M5k and SEM, as well as between the two M5k-versions is discussed. In addition, two-dimensional metrology based on feature contour extraction from optical or from SEM images has been compared. Although its resolution is inherently lower than that of the high-NA M5k-SWD and a reticle SEM, the M5k-LWD offers a possibility to extend such assessment to pelliclized reticles, which is not possible on the alternative tools.

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Rik M. Jonckheere, Vicky Philipsen, Gerd Scheuring, Frank Hillmann, Hans-Jurgen Brueck, Volodymyr Ordynskyy, Kai Peter, Andrew C. Hourd, Thomas Schaetz, Shiuh-Bin Chen, Parkson W. Chen, and Karl Sommer "Through-pellicle-capable DUV-based CD metrology on reticles for wafer fab and R&D environment", Proc. SPIE 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (28 May 2003); https://doi.org/10.1117/12.515116

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