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10 November 2003 Extended-wavelength InGaAs on GaAs hybrid image sensors
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Short wavelength infrared (SWIR) photovoltaic diode structures made of InGaAs material were grown on GaAs by means of molecular beam epitaxy. Growth quality and composition of the layers are determined by HRXRD. The electrical characterization is performed by Current-Bias characterization (proposal) and spectral resolved measurements to determine the resistance area product (R0A) and the spectral responsivity (R) of diodes. The processing is performed with standard photolithography and micro-structuring techniques aiming at the production of 1D and 2D infrared camera arrays. The diced IR sensor is flip chip assembled on a Silicon read out integrated circuit (ROIC). Linear arrays of 256 pixels with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Measures of electrical interconnection yield will be shown. Functionality is proven for different applications up to 2.5 μm wavelength.
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Joachim John, Lars Zimmermann, Patrick Merken, Stefan de Groote, Gustaaf Borghs, Chris Van Hoof, Stefan Nemeth, and Thierry Colin "Extended-wavelength InGaAs on GaAs hybrid image sensors", Proc. SPIE 5152, Infrared Spaceborne Remote Sensing XI, (10 November 2003);

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