12 January 2004 Advanced planar LWIR and VLWIR HgCdTe focal plane arrays
Author Affiliations +
The advanced planar ion-implantation-isolated heterojunction process, which utilizes the benefits of both the boron implantation and the heterojunction epitaxy techniques, has been developed and used to produce longwave and very longwave HgCdTe focal plane arrays in the 320v256 format. The wavelength of these arrays ranges from 10.0-17.0μm. The operability of the longwave HgCdTe arrays is typically over 97%. Without anti-reflection coating and with a 60° FOV cold shield, the D* of the 10.0μm array is 9.4x1010cm x (Hz)1/2 x W-1 at 77K. The 14.7μm and 17.0μm very longwave HgCdTe array diodes have excellent reverse characteristics. The detailed characteristics of these arrays are presented.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Muren Chu, Ray H.K. Gurgenian, Shoghig Mesropian, Sevag Terterian, Latika Becker, D. Walsh, S. A. Kokoroski, Mark A. Goodnough, and Brett D. Rosner "Advanced planar LWIR and VLWIR HgCdTe focal plane arrays", Proc. SPIE 5167, Focal Plane Arrays for Space Telescopes, (12 January 2004); doi: 10.1117/12.503236; https://doi.org/10.1117/12.503236


New planar process for implementation of p on n HgCdTe...
Proceedings of SPIE (January 22 2003)
Progress in cooled IR detectors and new developments
Proceedings of SPIE (January 23 2008)
Megapixel HgCdTe MWIR focal plane array with a 15 um...
Proceedings of SPIE (February 18 2004)
Advanced HgCdTe focal plane arrays
Proceedings of SPIE (October 09 2003)

Back to Top