29 January 2004 Multilayer-coated photodiodes with polarization sensitivity at EUV wavelength
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Abstract
The design of Mo/Si and Mo/Y multilayers as EUV polarizers is presented. The polarization performance of these multilayers was calculated based on their optical properties at around Brewster angles. The polarization results of a silicon photodiode that was coated with an interface-engineered Mo/Si multilayer are described. The sensitivity of this specially-coated photodiode and its polarization responses were determined from both reflectance and transmittance of the multilayer coating, using synchrotron radiation. The multilayer reflected 69.8% of s-polarized light and only 2.4% of p-polarized light, therefore transmitted about 0.2% s-polarized light and 8.4% p-polarized light at 13.5 nm to the underlying photodiode substrate. A polarization ratio based on transmittance values, (Tp-Ts)/(Tp+Ts), of 95% was achieved with sufficiently high sensitivity. This result demonstrates the usefulness of Mo/Si multilayer-coated photodiodes as future EUV polarimeters.
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Benjawan Kjornrattanawanich, Benjawan Kjornrattanawanich, Sasa Bajt, Sasa Bajt, John F. Seely, John F. Seely, } "Multilayer-coated photodiodes with polarization sensitivity at EUV wavelength", Proc. SPIE 5168, Optics for EUV, X-Ray, and Gamma-Ray Astronomy, (29 January 2004); doi: 10.1117/12.507115; https://doi.org/10.1117/12.507115
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