12 December 2003 Deformation of silicon surfaces
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Abstract
Processing of semiconductors, including machining, grinding, or polishing, involves thermomechanical deformation of a thin surface layer, thus coupling temperature and stress fields. Si, Ge, and other III-V semiconductors, exhibit complex constitutive laws coupling mechanical deformation with an evolving microstructure, typically dislocation density or coordination number. Irreversible shear flow and phase transitions are induced by combined stresses and temperatures. We discuss constitutive laws applicable to the machining of silicon.
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John C. Lambropoulos, Kang-Hua Chen, Theodore J. Lambropoulos, "Deformation of silicon surfaces", Proc. SPIE 5179, Optical Materials and Structures Technologies, (12 December 2003); doi: 10.1117/12.506332; https://doi.org/10.1117/12.506332
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