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31 December 2003 Mask and source optimization for lithographic imaging systems
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This article proposes a new optimization procedure for mask and illumination geometries in optical projection lithography. A general merit function is introduced that evaluates the imaging performance of arbitrary line patterns over a certain focus range. It also takes into account certain technological aspects that are defined by the manufacturability and inspectability of the mask. Automatic optimization of the mask and illumination parameters with a genetic algorithm identifies optimum imaging conditions without any additional a-priori knowledge about lithographic processes. Several examples demonstrate the potential of the proposed concept.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Erdmann, Richard Farkas, Tim Fuehner, Bernd Tollkuehn, and Gabriela Kokai "Mask and source optimization for lithographic imaging systems", Proc. SPIE 5182, Wave-Optical Systems Engineering II, (31 December 2003);

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