26 January 2004 Advanced technologies for high-efficiency GaInN LEDs for solid state lighting
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Abstract
Solid state lighting has seen a rapid development over the last decade. They compete and even outperform light sources like incandescent bulbs and halogen lamps. LEDs are used in applications where brightness, power consumption, reliability and costs are key parameters as automotive, mobile and display applications. In the future LEDs will also enter the market of general lighting. For all of these new applications highly efficient, scalable and cost efficient technologies are required. These targets can be matched by SiC based flip chip LEDs which enable the design of high current chips with efficiencies of up to 28 lm/W in white solderable packages. An alternative approach is the implementation of thinfilm technology for GaInN. The LED is fabricated by transferring the epilayers with laser lift off from sapphire to a GaAs host substrate. In combination with efficient surface roughening and highly reflective p-mirror metalization an extraction efficiency of 70% and wall plug efficiency of 24% at 460 nm have been shown. The chips showed 16 mW @ 20 mA with a Voltage of 3.2 V. The technology is scalable from small size LEDs to high current Chips and is being transferred to mass production.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Volker Harle, Volker Harle, Berthold Hahn, Berthold Hahn, Johannes Baur, Johannes Baur, Michael Fehrer, Michael Fehrer, Andreas Weimar, Andreas Weimar, Stephan Kaiser, Stephan Kaiser, Dominik Eisert, Dominik Eisert, Franz Eberhard, Franz Eberhard, Andreas Plossl, Andreas Plossl, Stefan Bader, Stefan Bader, } "Advanced technologies for high-efficiency GaInN LEDs for solid state lighting", Proc. SPIE 5187, Third International Conference on Solid State Lighting, (26 January 2004); doi: 10.1117/12.521358; https://doi.org/10.1117/12.521358
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