Ultra-violet light emitting diodes with a peak wavelength of 293 nm were grown by MOCVD on AlN on sapphire. The maximum output power was 15 μW at 100 mA DC current injection for on wafer, room temperature testing. We have shown that by forming an interdigitated multi-fingered n-contact compared to a square geometry LED, the series resistance is reduced by ~ 8 - 15 Ω at 100 mA. This results in a 2 - 4 V reduction in drive voltage at 100 mA. The quantum wells exhibit a sharp electroluminescence peak at 293 nm with a 9 nm full-width at half maximum, but deep level related emission was observed at 2.56, 2.80, 3.52, and 3.82 eV. The high energy peaks, 3.52 and 3.82 eV, saturate with increasing drive current while the low energy peaks, 2.56 and 2.80 eV, increase with drive current proportional to the quantum well emission. This indicates the recombination mechanism for the low energy and high energy peaks is fundamentally different. We have also shown that forward bias leakage current in these devices is another factor limiting the quantum efficiency.