4 November 2003 Single steady frequency and narrow-linewidth external-cavity semiconductor laser
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Abstract
A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10-3°C by temperature control system. The experiments have been carried out and the results obtained - the spectral line width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.
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Weirui Zhao, Weirui Zhao, Pengfei Jiang, Pengfei Jiang, Fuzeng Xie, Fuzeng Xie, } "Single steady frequency and narrow-linewidth external-cavity semiconductor laser", Proc. SPIE 5188, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies, (4 November 2003); doi: 10.1117/12.504456; https://doi.org/10.1117/12.504456
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