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13 January 2004 Fabrication and metrology of diffraction limited soft x-ray optics for the EUV microlithography
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EUVL, i.e. microlithography at 13nm is one of the most likely technologies to satisfy the requirements for the 45nm-node and below of the IC-manufacturing roadmap. The development of the first step and scan machines meeting production requirements of field size and resolution is in progress. A key component of these machines will be a diffraction limited, off-axis mirror system with aspherical surfaces. The optical surfaces of these mirrors have to be fabricated and measured with unprecedented accuracy. In recent years, technology development at Carl Zeiss SMT AG was focussed on the on-axis aspheres of the NA=0.30 micro exposure tool (MET). Presently this technology is transferred to the surfaces of a NA=0.25 off-axis, large field system The current status of the fabrication and metrology of both on-axis and off-axis mirrors will be reviewed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Udo Dinger, Guenther Seitz, Stefan Schulte, Frank Eisert, Christian Muenster, Stefan Burkart, Siegfried Stacklies, Christian Bustaus, Hubert Hoefer, Maximilian Mayer, Bernhard Fellner, Oliver Hocky, Markus Rupp, Klaus Riedelsheimer, and Peter Kuerz "Fabrication and metrology of diffraction limited soft x-ray optics for the EUV microlithography", Proc. SPIE 5193, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications, (13 January 2004);

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