7 January 2004 Design of high-average-power clean EUV light source based on laser-produced Xenon plasma
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Abstract
Important design factors are evaluated for a high average power, clean EUV light source by laser produced plasma. The basic requirements are high average power, high stability, and long lifetime, and these are closely relating with absorption loss by xenon, repetition rate, and fast ion generation. These subjects are evaluated based on experimental data and analytical model of a laser produced xenon plasma.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Endo, Akira Endo, Tamotsu Abe, Tamotsu Abe, Takashi Suganuma, Takashi Suganuma, Yousuke Imai, Yousuke Imai, Hiroshi Someya, Hiroshi Someya, Hideo Hoshino, Hideo Hoshino, Nakano Masaki, Nakano Masaki, Georg Soumagne, Georg Soumagne, Hiroshi Komori, Hiroshi Komori, Yuichi Takabayashi, Yuichi Takabayashi, Hakaru Mizoguchi, Hakaru Mizoguchi, } "Design of high-average-power clean EUV light source based on laser-produced Xenon plasma", Proc. SPIE 5196, Laser-Generated and Other Laboratory X-Ray and EUV Sources, Optics, and Applications, (7 January 2004); doi: 10.1117/12.503434; https://doi.org/10.1117/12.503434
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