7 January 2004 Ultrafast x-ray diffraction studies on Si(111) and DMABN crystals using Cu-K-α radiation
Author Affiliations +
Abstract
A novel laser-pumped X-ray source is used to investigate generation of shock waves in a semiconductor and conformational changes in a molecular crystal. Ultrashort Cu-Kα pulses are generated by focusing 130 fs laser pulses from the ATLAS titanium-sapphire laser of our institute on a slowly moving copper tape. Irradiating Si(111) surfaces with a few 100 mJ/cm2 pulses at 800 nm we observe an increase in the integrated reflection on a relatively slow time scale of several 100 ps. This observation is explained by the increased geometrical structure factor generated by the shock wave propagating into a mosaic crystal. The work on conformational changes was performed with DMABN (dimethylaminobenzonitrile, sum formula C9H10N2). A pump-probe experiment using the third harmonic of the titanium-sapphire laser (λ = 265 nm) as the pump yields indications of an increase of the 004 reflection in a time shorter than 10 ps. Such an increase is expected owing to photo-induced rotation of the two methyl groups around the major axis of the molecule.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Riccardo Tommasini, Riccardo Tommasini, Christof Root, Christof Root, Markus Braun, Markus Braun, Peter Gilch, Peter Gilch, Wolfgang Zinth, Wolfgang Zinth, Ernst E. Fill, Ernst E. Fill, } "Ultrafast x-ray diffraction studies on Si(111) and DMABN crystals using Cu-K-α radiation", Proc. SPIE 5196, Laser-Generated and Other Laboratory X-Ray and EUV Sources, Optics, and Applications, (7 January 2004); doi: 10.1117/12.507862; https://doi.org/10.1117/12.507862
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top