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20 January 2004 Nature of nonlinearity of I-V characteristics in CdTe:Cl single crystals
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Abstract
The current-voltage characteristics are investigated in single crystals of CdTe doped with Cl. Measured samples were ntype conductivity with resistivity ρ=(0.5-2.0)×108 Ohm×cm, electron concentration n=(0.5÷2.0)×108 cm-3 and electron mobility μ=280÷300 cm2/Vxs. Experimental data are explained in the framework of theory of highly doped and highly compensated (HDHC) semiconductors. The mobility-lifetime product measured at room temperature is found to be of the order of (1÷5)x 10-4 cm2xV-1. It means that this material can be used for manufacture of X-ray detectors.
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Andriy V. Sukach, Volodymyr V. Tetyorkin, Volodymyr D. Popovych, and Volodymyr M. Popov "Nature of nonlinearity of I-V characteristics in CdTe:Cl single crystals", Proc. SPIE 5198, Hard X-Ray and Gamma-Ray Detector Physics V, (20 January 2004); https://doi.org/10.1117/12.507424
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