Schottky barriers at Au/p-CdTe interfaces

Yevgen O. Bilevych; Andriy V. Sukach; Volodymyr V. Tetyorkin; A. I. Boka

doi:10.1117/12.507331

20 January 2004 Schottky barriers at Au/p-CdTe interfaces

Yevgen O. Bilevych, Andriy V. Sukach, Volodymyr V. Tetyorkin, A. I. Boka

Proceedings Volume 5198, Hard X-Ray and Gamma-Ray Detector Physics V; (2004) https://doi.org/10.1117/12.507331
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

The Schottky barrier formation are investigated in Au/p-CdTe contacts. The contacts were manufactured by electroless deposition of Au at the surfaces prepared by wet chemical etching. The influence of the surface treatment on the Schottky barrier height are studied. The potential barrier height is determined from the photoemission current spectra measurements. The secondary ion-mass spectroscopy (SIMS) profiling is carried out to study the compositional structure in as-deposited contacts as well as stored under normal laboratory conditions during one-year period. The effect of thermal annealing on electrical and photoelectrical properties of the contacts is studied. For comparison, the contacts Cu/p-CdTe prepared by the same method are studied too.

Citation Download Citation

Yevgen O. Bilevych, Andriy V. Sukach, Volodymyr V. Tetyorkin, and A. I. Boka "Schottky barriers at Au/p-CdTe interfaces", Proc. SPIE 5198, Hard X-Ray and Gamma-Ray Detector Physics V, (20 January 2004); https://doi.org/10.1117/12.507331

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