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21 October 2003 Optical and thermal studies of deep levels in the photorefractive ternary compound CdIn2Te4
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Abstract
Photoelectronic processes in CdIn2Te4 are investigated by means of photoconductivity studies and by the thermal spectroscopy: the photoinduced current transient spectroscopy. The so-called four-gate method shows that we are in presence of a continuous or quasi-continuous distribution of levels in the energy bandgap. This occurs in the whole range of energy prospected: 0.1 to 0.7 eV. The analysis of the decay of the photocurrent transients at various temperatures allows to calculate the density of states and leads to the conclusion that the trap distribution inside the gap is formed by two parts: a continuous exponential trap distribution under the conduction band, until 0.35 eV, and a Gaussian distribution from 0.35 to 0.7 eV with a maximum at 0.55 eV, near the middle of the gap.
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Mayer Tapiero and Zakaria Guellil "Optical and thermal studies of deep levels in the photorefractive ternary compound CdIn2Te4", Proc. SPIE 5206, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications IX, (21 October 2003); https://doi.org/10.1117/12.507427
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