8 December 2003 Elaboration of new uncooled detector materials highly sensitive in the near-IR region
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Abstract
The studies of the optical and photoelectric properties of Cd1-xHgxTe:V (x≤0.02, Nv = 1019 cm-3) were carried out. The investigated semiinsulating (ρ = 108 - 109 Ωxcm) crystals were grwn by the vertical Bridgman technique. All obtained samples had n-type conductivity. The measurements of absorption, photoluminescence and photodiffusion spectra allowed us to obtain the information about the impurity centers and intrinsic defects. The nature and the position of their energy levels with respect to the crystal energy band were determined. It was shown that the impurity centers are in the two- and three-ionized states. In the case of V2+ ions excited 4T1(F)- and 4A2(F)-states for Cd1-xHgxTe:V (x =0.018) crystal is in resonance with the conduction band. It was found that for these crystals the photogeneration of electrons from impurity levels are determined both by direct photoionization and autoionization of electrons from excited states to the conduction band. It was found that the photosensitivity region for Cd1-xHgxTe:V crystals is protracted up to 1800 nm. The dynamic of electronic processes with the participation of impurity and intrinsic defects were investigated using a time-resolved photoelectric spectroscopy. It was shown that the electric processes, which determine the photosensitivity region of this crystal is high speed and corresponds to the subnanosecond region.
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Yuriy P. Gnatenko, Yuri P. Piryatinski, Roman V. Gamernyk, Ivan O. Faryna, Petro M. Bukivskij, Stepan Yu. Paranchych, Lidia D. Paranchych, "Elaboration of new uncooled detector materials highly sensitive in the near-IR region", Proc. SPIE 5209, Materials for Infrared Detectors III, (8 December 2003); doi: 10.1117/12.516446; https://doi.org/10.1117/12.516446
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