6 February 2004 Slow charge recombination at a dye-sensitized nanocrystalline TiO2/organic semiconductor heterojunction employing Al2O3 coatings
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Abstract
Control of charge interfacial charge transfer is central to the design of photovoltaic devices. We report herein the application of insulating metal oxide blocking layers to control the charge recombination kinetics at a solid-state dye sensitised nanocrystalline inorganic/organic semiconductor interface. We show that the conformal growth of a ~1 nm thick overlayer of Al2O3 on a preformed nanocrystalline TiO2 film results in a ~3-fold retardation in the rate of charge recombination at such an interface. This observation shows a good correlation with the current/voltage characteristics of dye sensitized nanocrystalline solar cells fabricated from such films, with the Al2O3 coating resulting in a 40% improvement in overall device efficiency
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Saif A Haque, Emilio Palomares, Cigang Xu, Robert J. Potter, Andrew B. Holmes, James R. Durrant, "Slow charge recombination at a dye-sensitized nanocrystalline TiO2/organic semiconductor heterojunction employing Al2O3 coatings", Proc. SPIE 5215, Organic Photovoltaics IV, (6 February 2004); doi: 10.1117/12.505789; https://doi.org/10.1117/12.505789
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