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6 February 2004 Thick frontal dead layers in photovoltaic cells: theoretical quantum efficiency and determination of the diffusion length
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Abstract
Effects of a dead layer localized at the interface in a photodiode are studied theoretically. The model proposed here is developed for a Schottky junction but can be adapted to any other structure. A sharp decrease of the quantum efficiency in the short wavelength range is predicted, as generally observed experimentally. The various features encountered for the spectral responses are explained by the influence of the diffusion length L and of the dead layer thickness d. It is shown, moreover, that measuring the diffusion length from the photovoltaic short circuit spectra gives, in fact, the sum of L and d but determination of the maximum in the spectral response allows to separate the two.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mayer Tapiero and Jean P. Zielinger "Thick frontal dead layers in photovoltaic cells: theoretical quantum efficiency and determination of the diffusion length", Proc. SPIE 5215, Organic Photovoltaics IV, (6 February 2004); https://doi.org/10.1117/12.507756
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