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17 November 2003 Influence of gate dielectrics on electrical properties of F8T2 polyfluorene thin film transistors
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Abstract
The electrical properties of polymeric thin film transisitors (P-TFTs) based on poly(9,9-dioctylfluorene-co-bithiophene) alternating copolymer (F8T2) have been studied. Device performance was compared for amorphous silicon nitride deposited by LPCVD and PECVD techniques, aluminum oxide deposited by sputtering, titanium oxide deposited by sputtering, and thermal silicon oxide gate dielectrics. A heavily n-type doped crystalline silicon wafer coated with the desired gate dielectric was used. Photolithographic patterning of source/drain electrodes directly on top of the F8T2 layer is also discussed. The main conclusion from this work is that traps within the F8T2 define the conduction process within the device.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Swensen, Jerzy Kanicki, and Alan J. Heeger "Influence of gate dielectrics on electrical properties of F8T2 polyfluorene thin film transistors", Proc. SPIE 5217, Organic Field Effect Transistors II, (17 November 2003); https://doi.org/10.1117/12.507630
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