17 November 2003 Ohmic contact for high-performance organic electronic devices
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Abstract
A high-performance organic diode is demonstrated by using C60 sandwiched between a cathode and an anode using metals with different diffusivity and donor ability. In this manuscript,copper (Cu)and aluminum (Al)are selected as the cathode and anode, respectively. C60 is used as the organic electron-acceptor for its high stability and high carrier mobility. The as-prepared diode shows poor performance.However,after heat treatment, the Cu/C60 interface becomes an Ohmic contact through Cu diffusion and charge-transfer processes,allowing highly efficient electron injection from the Cu electrode. On the other hand, a rectified C60/Al contact is formed, prohibiting efficient electron injection from the Al electrode into C60. Hence,a high-performance organic diode is formed through a heat treatment process, not by the selection of metals with different work functions. Due to the high mobility of C60, the device shows megahertz frequency response, and it can also handle rather high current density (363 A/cm2 at 2.4V). This opens the way for the formation of high-performance organic electronic devices.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liping Ma, Liping Ma, Yang Yang, Yang Yang, } "Ohmic contact for high-performance organic electronic devices", Proc. SPIE 5217, Organic Field Effect Transistors II, (17 November 2003); doi: 10.1117/12.505108; https://doi.org/10.1117/12.505108
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