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17 November 2003 Phase behavior of polymer semiconductor films and its influence on the mobility in FET devices
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The phase behaviour of poly(9,9-dioctylfluorene-co-bithiophene) semiconducting polymer, (F8T2) in top gate thin film transistor device structures fabricated using inkjet printing is investigated. The source, drain and gate electrodes are patterned by inkjet printing from a solution of a conducting polymer, poly(3,4-ethylene dioxythiophene) (PEDOT) doped with poly(styrene sulfonic acid) (H. C. Starck), and a polymer layer is used as the dielectric. At room temperature, the as-spun semiconductor films exhibit an isotropic, amorphous phase. Field effect mobilities of more than 4 x 10-3 cm2 / Vs, and on / off current ratios greater than 105 are observed. Upon annealing at elevated temperatures, crystalline, and liquid crystalline phases are exhibited. The crystalline domains are identified by polarised optical and atomic force microscopy. We investigate the crystallinity as a function of the annealing temperature. The order in the material is found to correlate well to the field effect mobility in the TFT device structure. The results of TFTs fabricated using inkjet printing to deposit the semiconductor film are also shown.
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Christopher J. Newsome, Takeo Kawase, Tatsuya Shimoda, and David J. Brennan "Phase behavior of polymer semiconductor films and its influence on the mobility in FET devices", Proc. SPIE 5217, Organic Field Effect Transistors II, (17 November 2003);

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