17 November 2003 Time dependence of organic polymer thin film transistor current
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We present results on the electrical characterization of gate-planarized organic polymer thin-film transistors (OP-TFTs). We investigated the time dependence of the OP-TFT current. Over a relatively short time range (several 100ms), we observed a decrease of the OP-TFT current corresponding to the establishment of the steady-state regime, and is slower when the transistor is in the weak accumulation regime or in the OFF-state. We believe that this is associated with carrier thermalization in the organic semiconductor. Over longer time scales, the decrease of the OP-TFT current is due to device aging and can be associated with a threshold voltage shift, up to 20V after an electrical stress at VGS=-30V for 30min at room temperature. This shift is fully reversible once the gate polarization is removed and might be associated with charge trapping in the semiconductor.
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Sandrine Martin, Sandrine Martin, Laurence Dassas, Laurence Dassas, Michael C. Hamilton, Michael C. Hamilton, Jerzy Kanicki, Jerzy Kanicki, } "Time dependence of organic polymer thin film transistor current", Proc. SPIE 5217, Organic Field Effect Transistors II, (17 November 2003); doi: 10.1117/12.504536; https://doi.org/10.1117/12.504536

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