17 November 2003 Time dependence of organic polymer thin film transistor current
Author Affiliations +
Abstract
We present results on the electrical characterization of gate-planarized organic polymer thin-film transistors (OP-TFTs). We investigated the time dependence of the OP-TFT current. Over a relatively short time range (several 100ms), we observed a decrease of the OP-TFT current corresponding to the establishment of the steady-state regime, and is slower when the transistor is in the weak accumulation regime or in the OFF-state. We believe that this is associated with carrier thermalization in the organic semiconductor. Over longer time scales, the decrease of the OP-TFT current is due to device aging and can be associated with a threshold voltage shift, up to 20V after an electrical stress at VGS=-30V for 30min at room temperature. This shift is fully reversible once the gate polarization is removed and might be associated with charge trapping in the semiconductor.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sandrine Martin, Sandrine Martin, Laurence Dassas, Laurence Dassas, Michael C. Hamilton, Michael C. Hamilton, Jerzy Kanicki, Jerzy Kanicki, } "Time dependence of organic polymer thin film transistor current", Proc. SPIE 5217, Organic Field Effect Transistors II, (17 November 2003); doi: 10.1117/12.504536; https://doi.org/10.1117/12.504536
PROCEEDINGS
9 PAGES


SHARE
Back to Top