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9 July 2003 Electrical switching in sol-gel-derived SiO2 films
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Abstract
We have investigated electrical switching behavior of sol-gel derived SiO2 films in c-Si(p)/SiO2/metal structures. The SiO2 film is fabricated from silicafilm (a soluble Si polymer in dissolved in denatured alcohol) using spin-coating technique. The thickness of the film is in the range of 300~2000 Å which depends on both spinning speed and the degree of dilution. We find that, with Ag as the top contact, when the applied voltage reaches a critical value of 1.5 ~ 2.5 V, current increases rapidly many orders of magnitude higher, and an irreversible switching occurs. The switching is also found to be polarity-dependent. The switching occurs only when the top contact (Ag) is biased positively, indicating the switching involves diffusion or electromigration of Ag. Both switching voltage and current are found to scale with the top contact area of the device. The switching dynamics is studied using voltage-pulse over a duration of 300 ns to 500 ms and amplitude of 2 to 20 V. We find that the switching electrical field is strongly dependent of the delay time prior to switching, and not related to the film thickness.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian Hu, Scott Ward, and Qi Wang "Electrical switching in sol-gel-derived SiO2 films", Proc. SPIE 5218, Complex Mediums IV: Beyond Linear Isotropic Dielectrics, (9 July 2003); https://doi.org/10.1117/12.506333
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