Phonons and polaritons in semiconductor layer structures

Mathias Schubert; Tino Hofmann

doi:10.1117/12.505863

9 July 2003 Phonons and polaritons in semiconductor layer structures

Mathias Schubert, Tino Hofmann

Proceedings Volume 5218, Complex Mediums IV: Beyond Linear Isotropic Dielectrics; (2003) https://doi.org/10.1117/12.505863
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

This work presents a spectroscopic ellipsometry study of phonon and polariton modes in zincblende group-III-group-V semiconductor layer structures. Contributions to the dielectric function due to infrared-active polar phonon modes and coupled longitudinal-phonon-plasmon modes are differentiated and quantified upon model lineshape analysis. Interface Fano-, Brewster- and surface-guided modes are assigned upon solution of the surface polariton dispersion relation for layered structures, and addressed by experiment. We explain the physical origin of the Berreman-effect.

Citation Download Citation

Mathias Schubert and Tino Hofmann "Phonons and polaritons in semiconductor layer structures", Proc. SPIE 5218, Complex Mediums IV: Beyond Linear Isotropic Dielectrics, (9 July 2003); https://doi.org/10.1117/12.505863

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