15 October 2003 Sub-lithographic patterning technology for nanowire model catalysts and DNA label-free hybridization detection
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Abstract
Sub-lithographic nanowires and nanogaps were fabricated by spacer lithography (size reduction technology), which is a parallel processes for nanometer pattern generation on a wafer scale with resolution comparable to the best electron beam lithography. Sub-10nm line width is defined by using a sacrificial ultrathin film deposited by low pressure chemical vapor deposition (LPCVD), in a process similar to formation of gate sidewall spacers in CMOS processing. Furthermore, a novel method called iterative spacer lithography (ISL) is demonstrated by alternating materials and repeating the spacer lithography multiple times in order to multiply the pattern density. Silicon structures with sub-10nm width fabricated by this process were used as a mold in nanoimprint lithography and lift-off patterning of sub-30nm platinum nanowires for use as model catalyst systems. A similar process called reversed spacer lithography (RSL) is demonstrated to form sub-10nm nanogap device and fluid channels in poly-Si. This nanogap device provides a label-free tool for DNA hybridization detection based on measuring capacitance changes in the gap.
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Yang-Kyu Choi, Jeff Grunes, Joon Sung Lee, Ji Zhu, Gabor A. Somorjai, Luke P. Lee, Jeffrey Bokor, "Sub-lithographic patterning technology for nanowire model catalysts and DNA label-free hybridization detection", Proc. SPIE 5220, Nanofabrication Technologies, (15 October 2003); doi: 10.1117/12.505409; https://doi.org/10.1117/12.505409
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