Luminescence of nanostructured Y2O3:Eu thin films fabricated using glancing angle deposition techniques

Peter C. P. Hrudey; Mike Taschuk; Ying Y. Tsui; Robert Fedosejevs; Jeremy C. Sit; Michael J. Brett

doi:10.1117/12.506266

24 November 2003 Luminescence of nanostructured Y₂O3:Eu thin films fabricated using glancing angle deposition techniques

Peter C. P. Hrudey, Mike Taschuk, Ying Y. Tsui, Robert Fedosejevs, Jeremy C. Sit, Michael J. Brett

Author Affiliations +

Proceedings Volume 5224, Nanomaterials and Their Optical Applications; (2003) https://doi.org/10.1117/12.506266
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Thin films of europium-doped yttrium oxide (Y₂O₃:Eu), a well-known luminescent material, were grown using electron beam evaporation, in combination with the Glancing Angle Deposition (GLAD) technique. GLAD makes use of controlled substrate motion during physical vapour deposition (PVD), resulting in a high degree of control over the nanostructure of the film. Until recently GLAD had not been used with luminescent materials. Films were deposited using pre-doped Y₂O₃:Eu source material, with either 4.0% (wt) Eu doping or 5.6% (wt) Eu doping. The nanostructure of these films was characterized through scanning electron microscopy, while the light emission properties of these films was characterized by photoluminescence measurements. In order to optimize the light emission properties of the films the partial pressure of oxygen during the deposition of the films was varied. Films were deposited on both silicon and sapphire substrates, in order to compare how different substrates affect the growth and light emission of the films.

Citation Download Citation

Peter C. P. Hrudey, Mike Taschuk, Ying Y. Tsui, Robert Fedosejevs, Jeremy C. Sit, and Michael J. Brett "Luminescence of nanostructured Y₂O3:Eu thin films fabricated using glancing angle deposition techniques", Proc. SPIE 5224, Nanomaterials and Their Optical Applications, (24 November 2003); https://doi.org/10.1117/12.506266

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