Active photonic crystal devices in III-V semiconductors

Yong-Hee Lee; Han-Youl Ryu; Hong-Gyu Park; Sung Min Kwon; Sang-Hoon Kim

doi:10.1117/12.507872

Translator Disclaimer

20 October 2003 Active photonic crystal devices in III-V semiconductors

Yong-Hee Lee, Han-Youl Ryu, Hong-Gyu Park, Sung Min Kwon, Sang-Hoon Kim

Author Affiliations +

Proceedings Volume 5225, Nano- and Micro-Optics for Information Systems; (2003) https://doi.org/10.1117/12.507872
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.

Citation Download Citation

Yong-Hee Lee, Han-Youl Ryu, Hong-Gyu Park, Sung Min Kwon, and Sang-Hoon Kim "Active photonic crystal devices in III-V semiconductors", Proc. SPIE 5225, Nano- and Micro-Optics for Information Systems, (20 October 2003); https://doi.org/10.1117/12.507872

ACCESS THE FULL ARTICLE