20 October 2003 Active photonic crystal devices in III-V semiconductors
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Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong-Hee Lee, Yong-Hee Lee, Han-Youl Ryu, Han-Youl Ryu, Hong-Gyu Park, Hong-Gyu Park, Sung Min Kwon, Sung Min Kwon, Sang-Hoon Kim, Sang-Hoon Kim, } "Active photonic crystal devices in III-V semiconductors", Proc. SPIE 5225, Nano- and Micro-Optics for Information Systems, (20 October 2003); doi: 10.1117/12.507872; https://doi.org/10.1117/12.507872


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