4 November 2003 Aging effect on photoluminescence of p-type porous silicon
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Proceedings Volume 5226, 12th International School on Quantum Electronics: Laser Physics and Applications; (2003) https://doi.org/10.1117/12.519491
Event: 12th International School on Quantum Electronics Laser Physics and Applications, 2002, Varna, Bulgaria
Abstract
Visible photoluminescence (PL) in anodized porous Si (PS) at room temperature has opened the way to realize different types of quantum electronics devices based on silicon technology. Such devices require a strong PL intensity and a controlled shift of the PL peak on the energy scale. Porous silicon is produced by electrochemical etching of either p- or n-type crystalline silicon. Illumination is one of the most complicated parameters in PS formation, because it changes the properties of microporous as well as macroporous layers. It is necessary to illuminate the wafer during the anodization in order to create the holes required by the chemical reaction to form the PS. In this paper we present the results of the effects of illumination level during fabrication on the PL properties of p-type PS and it time degradation dynamics.
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Ersin Kayahan, Ersin Kayahan, T. Oskay, T. Oskay, Fikret N. Haciyev, Fikret N. Haciyev, } "Aging effect on photoluminescence of p-type porous silicon", Proc. SPIE 5226, 12th International School on Quantum Electronics: Laser Physics and Applications, (4 November 2003); doi: 10.1117/12.519491; https://doi.org/10.1117/12.519491
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