Heterojunction laser diodes subjected to ionizing radiation

Dan G. Sporea; Andrei Costel Florean; Mihaela Gherendi

doi:10.1117/12.520113

30 September 2003 Heterojunction laser diodes subjected to ionizing radiation

Dan G. Sporea, Andrei Costel Florean, Mihaela Gherendi

Proceedings Volume 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies; (2003) https://doi.org/10.1117/12.520113
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

In this paper we report original results related to the degradation of laser diodes parameters, as they are subjected to electron-beam and gamma-ray irradiation. For this purpose, we investigated two double heterostructures laser diodes, operating at 808 nm, 850 nm respectively. The maximum emitted optical power was in the range of 5 -6 mW, in CW operation mode. Radiation induced modifications of laser diodes electrical, optoelectrinc and optical parameters were studied. Simultaneously, the responsivity of the embedded photodiode was monitored. Slightly changes in the laser threshold current, emitted radiation wavelength, serial resistance and external quantum efficiency were observed, while more important variations of the photodiode responsivity and laser diode spectral distribution were noticed. The temperature dependence of device parameters after the irradiation was also studied. The work under way is performed in the frame of EU’s Fusion Programme.

Citation Download Citation

Dan G. Sporea, Andrei Costel Florean, and Mihaela Gherendi "Heterojunction laser diodes subjected to ionizing radiation", Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); https://doi.org/10.1117/12.520113

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