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30 September 2003 Photoconductivity of amorphous As2S3-Sb2S3 thin films
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Abstract
The results of steady state and transient photoconductivity characteristics of As-S-Sb thermally deposited amorphous thin films are presented. The lux-ampere characteristics of the steady-state photoconductivity are described by the power low dependence σ = B • Fγ with the power index [equation] where T* is the parameter of localized states distribution. The spectral characteristics of the photoconductivity for As-S-Sb thin films represents a curve with a broad peak centered at 2.50-1.93 eV, and is shifted in the low energy region of the spectrum when the Sb content is increasing in the glass alloy. The transient characteristics of As-S-Sb amorphous films are discussed in frame of trap-controlled model for an exponential distribution of localized states in the band gap of amorphous semiconductor.
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M. A. Iovu, Mihai S. Iovu, and Sergiu D. Shutov "Photoconductivity of amorphous As2S3-Sb2S3 thin films", Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); https://doi.org/10.1117/12.520035
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