Properties and applications of doped chalcogenide glasses

Mihai S. Iovu

doi:10.1117/12.519897

30 September 2003 Properties and applications of doped chalcogenide glasses

Mihai S. Iovu

Proceedings Volume 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies; (2003) https://doi.org/10.1117/12.519897
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The effect of low amounts of antimony, tin, dysprosium, samarium and manganese on structure and optical properties of chalcogenide glassy semiconductors As₂S₃ and As₂Se₃ is investigated. The fundamental absorption edge shifts to longer wavelength with doping; the largest shift was observed for doped chalcogenide glasses. Near the edge absorption the impurity affects strongly the slope and the magnitude of the weak absorption tail. The steady-state and transient photoconductivity characteristics are adequately interpreted in frame of the model, in which transport and recombination of non-equilibrium holes are controlled by exponentially distributed hole traps with the distribution parameter T*, depending on the glass composition. Some application of amorphous chalcogenide thin film structures as registration media are presented.

Citation Download Citation

Mihai S. Iovu "Properties and applications of doped chalcogenide glasses", Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); https://doi.org/10.1117/12.519897

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