30 September 2003 Properties and applications of doped chalcogenide glasses
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Abstract
The effect of low amounts of antimony, tin, dysprosium, samarium and manganese on structure and optical properties of chalcogenide glassy semiconductors As2S3 and As2Se3 is investigated. The fundamental absorption edge shifts to longer wavelength with doping; the largest shift was observed for doped chalcogenide glasses. Near the edge absorption the impurity affects strongly the slope and the magnitude of the weak absorption tail. The steady-state and transient photoconductivity characteristics are adequately interpreted in frame of the model, in which transport and recombination of non-equilibrium holes are controlled by exponentially distributed hole traps with the distribution parameter T*, depending on the glass composition. Some application of amorphous chalcogenide thin film structures as registration media are presented.
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Mihai S. Iovu, "Properties and applications of doped chalcogenide glasses", Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); doi: 10.1117/12.519897; https://doi.org/10.1117/12.519897
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