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30 September 2003 Silicon waveguides fabrication process based on the anisotropic etching of Si<111>-oriented wafers
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Abstract
The fabrication process of c-Si waveguides based on the anisotropic etching of Si<111> oriented wafers is described. To obtain c-Si waveguides, the anisotropic etching was combined with an isotropic pre-etch step to a depth equal to the thickness of the final c-Si freestanding structure, followed by side-wall passivation. In addition, a second pre-etching step was performed to establish the depth of the air gap that acts as the bottom cladding of the waveguide. Freestanding c-Si waveguides with very smooth surfaces were obtained by anisotropic etching in a KOH solution. By using a Si3N4/SiO2 mask layer, double waveguides were obtained. The possible applications of c-Si based free standing structures include devices for optical communications and evanescent-wave bio- or chemical sensors.
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Dana Cristea, Paula Obreja, Elena Manea, and M. Kusko "Silicon waveguides fabrication process based on the anisotropic etching of Si<111>-oriented wafers", Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); https://doi.org/10.1117/12.520045
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