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6 October 2003 InGaAs resonant-cavity light-emitting diodes (RC LEDs)
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Proceedings Volume 5230, Laser Technology VII: Progress in Lasers; (2003)
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
We have developed resonant-cavity light emitting diodes (RC LED) with very good emission characteristics. RC LEDs proved to be more tolerant to the epitaxial growth parameters and device fabrication procedures. As relatively robust devices they are less sensitive to typical for VCSEL manufacturing challenges and seem to have great potential for applications. Comparing to classical LED the spectrum of RC LED is concentrated into a narrow line with less than 2 nm halfwidth. The RC LED spectrum is determined mainly by the cavity resonance; its width decreases with the increase of the cavity finesse and the intensity increase reflect the on axis cavity enhancement. Additional, favorable RC LED property is its emission characteristic directionality which depends on the tuning between QW emission and cavity resonance. We have optimized the series resistance of diodes. The best results have been obtained for digital alloy graded distributed Bragg reflector (DRB) interfaces. The MBE grown structures were tested extensively prior to the device fabrication by reflectivity and photoluminescence. The assembled diodes were subjected to electrical and optical tests. Generally we have found very good correlation between the results of optical test (PL maps) on as grown wafers and probe tests on final devices.
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Jan Muszalski, Maciej Bugajski, T. J. Ochalski, Bohdan Mroziewicz, Hanna Wrzesinska, Marianna Gorska, and J. Katcki "InGaAs resonant-cavity light-emitting diodes (RC LEDs)", Proc. SPIE 5230, Laser Technology VII: Progress in Lasers, (6 October 2003);

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