Selective deposition of GaN layers for semiconductor lasers technology

Beata Stanczyk; Andrzej Jagoda; Lech Dobrzanski

doi:10.1117/12.531765

6 October 2003 Selective deposition of GaN layers for semiconductor lasers technology

Beata Stanczyk, Andrzej Jagoda, Lech Dobrzanski

Proceedings Volume 5230, Laser Technology VII: Progress in Lasers; (2003) https://doi.org/10.1117/12.531765
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The method of selective deposition of GaN layer using combination of additional AlN and GaN films has been presented. All layers have been reached by lift-off technique and were etching ALN and dry etching GaN.

Citation Download Citation

Beata Stanczyk, Andrzej Jagoda, and Lech Dobrzanski "Selective deposition of GaN layers for semiconductor lasers technology", Proc. SPIE 5230, Laser Technology VII: Progress in Lasers, (6 October 2003); https://doi.org/10.1117/12.531765

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