6 October 2003 Selective deposition of GaN layers for semiconductor lasers technology
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Proceedings Volume 5230, Laser Technology VII: Progress in Lasers; (2003) https://doi.org/10.1117/12.531765
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
The method of selective deposition of GaN layer using combination of additional AlN and GaN films has been presented. All layers have been reached by lift-off technique and were etching ALN and dry etching GaN.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Beata Stanczyk, Beata Stanczyk, Andrzej Jagoda, Andrzej Jagoda, Lech Dobrzanski, Lech Dobrzanski, } "Selective deposition of GaN layers for semiconductor lasers technology", Proc. SPIE 5230, Laser Technology VII: Progress in Lasers, (6 October 2003); doi: 10.1117/12.531765; https://doi.org/10.1117/12.531765
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