6 October 2003 Semiconductor lasers with strain superposition in active layer
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Proceedings Volume 5230, Laser Technology VII: Progress in Lasers; (2003) https://doi.org/10.1117/12.531924
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
This work presents the possibility of modification of semiconductor laser characteristics by a superposition of stresses introduced during technological process. A short description of the most often introduced stress mechanisms and their theoretically expected influence on laser diode emission characteristics are outlined. Experimental results of combination of stress (or strain) mechanisms introduced both by a MOVE growth of lattice-mismatched GaAsP active layer in AlGaAs heterostructure and by H+ and He+ implantation used for stripe definition are presented. It has been shown that He+ implantation-induced strain can be considerably stronger with respect to lattice-mismatch originated strain then it has been evaluated so far in literature, giving possibilities of new solutions in optoelectronics design.
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Andrzej Malag, Andrzej Malag, } "Semiconductor lasers with strain superposition in active layer", Proc. SPIE 5230, Laser Technology VII: Progress in Lasers, (6 October 2003); doi: 10.1117/12.531924; https://doi.org/10.1117/12.531924

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