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28 June 1985 Deep Level Derivative Spectroscopy Of Semiconductors By Wavelength Modulation Techniques
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Abstract
An infrared wavelength modulated absorption spectrometer capable of measuring changes in the absorption coefficient of levels of 10-5 cm-1 in the spectral range 0.2-20 microns was employed to study bulk and surface absorption in semiconductors. The results of the study of deep levels in semi-insulating GaAs, surface layers on Si, GaAs, and HgCdTe, oxygen complexes in floating-zone silicon, and determination of strain in ion implanted layers are presented.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Braunstein, S. M. Eetemadi, and R. K. Kim "Deep Level Derivative Spectroscopy Of Semiconductors By Wavelength Modulation Techniques", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); doi: 10.1117/12.946319; https://doi.org/10.1117/12.946319
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