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28 June 1985 Infrared Absorption Spectroscopy For The Characterization Of Oxygen In Silicon
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Oxygen is present in most silicon used for device fabrication and has important impact on fabrication yields and materials properties. This paper presents two aspects of the use of infrared absorption for the characterization of oxygen in silicon. The first part of the paper presents a summary of the efforts of various researchers to develop quantitative, non-destructive measurement of oxygen levels in silicon by means of the measurement of the 9 μm absorption band's absorption coefficient. The second part of the presentation presents evidence for the existence of two distinct species of oxygen in silicon based on spectroscopic evidence. This evidence suggests the existence of a substitutional species, with an absorption band at 19.5 μm, in addition to the familiar interstitial species with an absorption at 9 μm. Some of the consequences of this observation are discussed.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. C. O'Mara "Infrared Absorption Spectroscopy For The Characterization Of Oxygen In Silicon", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985);

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