14 August 2003 Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs
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Abstract
The authors report the most recent progress in Type II InAs/GaSb superlattice materials and photovoltaic detectors developed for focal plane array applications with a cutoff wavelength of ~8 μm. No turn-on of tunneling current was observed even at a reverse bias of -3 V for a 3 μm thick p-i-n photodiodes. The thermally-limited zero bias detectivity under 300 K 2 π FOV was 2~3×1011 cm•Hz1/2/W at liquid nitrogen temperature, with a current responsivity of 2~3 A/W and a mean quantum efficiency of ~50%. Initial passivation using SiO2 has shown to decrease the dark current by ~30% at a reverse bias of -1 V. The same detector structure was used for focal plane arrays with silicon readout integrated circuit. Concept proof of imaging was demonstrated with a format of 256×256 at liquid nitrogen temperature.
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Manijeh Razeghi, Manijeh Razeghi, Yajun Wei, Yajun Wei, Junjik Bae, Junjik Bae, Aaron Gin, Aaron Gin, Andrew Hood, Andrew Hood, Jutao Jiang, Jutao Jiang, Jongbum Nah, Jongbum Nah, } "Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs", Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, (14 August 2003); doi: 10.1117/12.512556; https://doi.org/10.1117/12.512556
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