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14 August 2003 Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs
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Abstract
The authors report the most recent progress in Type II InAs/GaSb superlattice materials and photovoltaic detectors developed for focal plane array applications with a cutoff wavelength of ~8 μm. No turn-on of tunneling current was observed even at a reverse bias of -3 V for a 3 μm thick p-i-n photodiodes. The thermally-limited zero bias detectivity under 300 K 2 π FOV was 2~3×1011 cm•Hz1/2/W at liquid nitrogen temperature, with a current responsivity of 2~3 A/W and a mean quantum efficiency of ~50%. Initial passivation using SiO2 has shown to decrease the dark current by ~30% at a reverse bias of -1 V. The same detector structure was used for focal plane arrays with silicon readout integrated circuit. Concept proof of imaging was demonstrated with a format of 256×256 at liquid nitrogen temperature.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, Yajun Wei, Junjik Bae, Aaron Gin, Andrew Hood, Jutao Jiang, and Jongbum Nah "Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs", Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, (14 August 2003); https://doi.org/10.1117/12.512556
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